Localized resistive switching in a ZnS-Ag/ZnS double-layer memory
Localized resistive switching in a ZnS-Ag/ZnS double-layer memory
复制标题
ZnS-Ag/ZnS 双层存储器中的局部电阻切换
DOI：
10.1088/0022-3727/47/45/455101
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
Liu Y. C.
中科院分区：
文献类型：
--
作者：
Zhang L.;Xu H. Y.;Wang Z. Q.;Zhao X. N.;Ma J. G.;Liu Y. C.
基于Ag/ZnS/ITO叠层结构，将电解质层制成由Ag纳米团簇嵌入的ZnS层和纯ZnS层组成的双层结构，实现了双极性连续开关存储器。Ag纳米团簇的引入导致在ZnS-Ag中形成比在ZnS中更厚的Ag导电丝（CF）。两个子层之间的CF尺寸的这种差异使得阻变局限于ZnS子层中。通过减小其厚度，减小了开关区域并且提高了局部化程度。因此，与单层ZnS存储器相比，双层器件显示出改善的开关均匀性、降低的形成/开关电压和更好的耐久性。
Bipolar resistive-switching memories were demonstrated based on a Ag/ZnS/ITO stack structure, where the electrolyte layer is made into a double-layer structure composed of a Ag-nanoclusters-embedded ZnS layer and a pure ZnS layer. The introduction of Ag-nanoclusters results in thicker Ag conducting filaments (CFs) formed in ZnS–Ag than in ZnS. This difference in CFs' size between two sub-layers makes the resistive switching localized in the ZnS sub-layer. By reducing its thickness, the switching region is reduced and the degree of localization is enhanced. Therefore, compared with the single-layer ZnS memory, the double-layer device shows improved switching uniformity, reduced forming/switching voltages and better endurance.