Microstructure of heteroepitaxial GaN revealed by x-ray diffraction
Microstructure of heteroepitaxial GaN revealed by x-ray diffraction
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DOI：
10.1063/1.1571217
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发表时间：
2003-06-01
影响因子：
3.2
通讯作者：
Hommel, D
中科院分区：
文献类型：
--
作者：
Chierchia, R;Böttcher, T;Hommel, D
利用高分辨率x射线衍射研究了金属有机气相外延在（0001）蓝宝石上生长的具有不同晶粒直径的氮化镓层的镶嵌性。利用不同x射线散射几何形状的数据确定了马赛克结构的相干长度、倾斜和扭曲。然后对不同模型的应用结果进行了比较和讨论。并将x射线数据得到的位错密度与平面透射电镜和原子力显微镜的结果进行了比较。(C) 2003年美国物理研究所。
The mosaicity of GaN layers grown by metalorganic vapor phase epitaxy, on (0001) sapphire and exhibiting different grain diameters is studied using high-resolution x-ray diffraction. The coherence lengths, the tilt and the twist of the mosaic structure are determined utilizing data taken in different x-ray scattering geometries. The results of different models, which were applied, are then compared and discussed. The dislocation densities, obtained from the x-ray data, are compared with the results of plan-view transmission electron microscopy and atomic force microscopy. (C) 2003 American Institute of Physics.