Photoluminescence Study of CuInSe2 Thin Films Prepared by the Selenization Technique
Photoluminescence Study of CuInSe2 Thin Films Prepared by the Selenization Technique
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硒化技术制备CuInSe2薄膜的光致发光研究
DOI：
10.1109/pvsc.1991.169395
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发表时间：
1991
影响因子：
1.5
通讯作者：
M. Takahashi
中科院分区：
文献类型：
--
作者：
M. Tanda;S. Manaka;J. Marín;K. Kushiya;H. Sano;A. Yamada;M. Takahashi
CuInSe2薄膜的制备与固相或气相硒的硒化技术，并进行光致发光测量，以确定与各种缺陷结构的能级。这些缺陷态的可能起源进行了讨论的基础上，单晶和薄膜CuInSe 2的能级图报告。结果发现，光致发光测量是敏感的原生缺陷和形成动力学的CuInSe 2和有用的硒化过程的优化。
CuInSe2 thin films were prepared by the selenization technique with solid- or vapor-phase selenium, and photoluminescence measurements were carried out to identify the energy levels associated with various defect structures. The possible origins of these defect states are discussed on the basis of the reported energy level diagram of single-crystal and thin-film CuInSe2. It is found that the photoluminescence measurement is sensitive to native defects and formation kinetics of CuInSe2 and useful in the optimization of the selenization process.