Back illuminated AlGaN solar-blind photodetectors
Back illuminated AlGaN solar-blind photodetectors
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DOI：
10.1063/1.1311821
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发表时间：
2000-09
影响因子：
4
通讯作者：
D. Lambert;M. M. Wong-M.;U. Chowdhury;C. Collins;T. Li;H. Kwon;B. Shelton;T. Zhu;J. Campbell-
中科院分区：
文献类型：
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作者：
D. Lambert;M. M. Wong-M.;U. Chowdhury;C. Collins;T. Li;H. Kwon;B. Shelton;T. Zhu;J. Campbell-
我们报道了AlxGa1−xN（0≤x≤0.60）异质外延背光太阳盲p-i-n光电二极管在（0001）蓝宝石衬底上的生长、制造和表征。采用低压金属有机化学气相沉积技术，在双抛光蓝宝石衬底上制备了iii族氮化物异质外延层。背光器件表现出非常低的暗电流密度。此外，它们在光响应峰值（λ ~ 280 nm）处表现出高达35%的外量子效率。为了在厚的Al0.6Ga0.4N窗口层上获得无裂纹的Al0.4Ga0.6N活性区，得到活化的p型Al0.4Ga0.6N层，对生长工艺进行了改进。
We report the growth, fabrication, and characterization of AlxGa1−xN (0⩽x⩽0.60) heteroepitaxial back-illuminated solar-blind p-i-n photodiodes on (0001) sapphire substrates. The group III-nitride heteroepitaxial layers are grown by low-pressure metalorganic chemical vapor deposition on double polished sapphire substrates using various growth conditions. The back-illuminated devices exhibit very low dark current densities. Furthermore, they exhibit external quantum efficiencies up to 35% at the peak of the photoresponse (λ∼280 nm). Improvements were made to the growth technique in order to achieve crack-free Al0.4Ga0.6N active regions on a thick Al0.6Ga0.4N window layer and to obtain activated p-type Al0.4Ga0.6N layers.