Tip artifact in atomic force microscopy observations of InAs quantum dots grown in Stranski-Krastanow mode
Tip artifact in atomic force microscopy observations of InAs quantum dots grown in Stranski-Krastanow mode
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DOI：
10.1063/1.2434806
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发表时间：
2007-02-01
影响因子：
3.2
通讯作者：
Taniwaki, Masafumi
中科院分区：
文献类型：
--
作者：
Shiramine, Ken-ichi;Muto, Shunichi;Taniwaki, Masafumi
对原子力显微镜（AFM）观察InAs岛时的针尖伪影进行了定量评价。这些岛是在分子束外延的Stranski-Krastanow模式中生长的。岛的宽度和高度，使用透射电子显微镜（TEM）和原子力显微镜测定。使用不包括天然氧化物的TEM测定的平均[（1）在条10上]面内宽度和高度分别为22和7 nm;使用包括氧化物的AFM测定的平均面内宽度和高度分别为35和8 nm。宽度差异是由于氧化物和头端伪影造成的。从TEM观察推断出包括氧化物的尺寸为27 nm的宽度和6 nm的高度，并对氧化物的厚度进行了校正。使用AFM测定的宽度与使用包括氧化物的TEM测定的宽度之间的8 nm的残余差异归因于尖端伪影。这些结果使我们能够从AFM图像中确定岛屿的实际大小。(c)2007年，美国物理学会。
The tip artifact in atomic force microscopy (AFM) observations of InAs islands was evaluated quantitatively. The islands were grown in the Stranski-Krastanow mode of molecular beam epitaxy. The width and height of the islands were determined using transmission electron microscopy (TEM) and AFM. The average [(1) over bar 10] in-plane width and height determined using TEM excluding native oxide were 22 and 7 nm, respectively; those determined using AFM including the oxide were 35 and 8 nm, respectively. The difference in width was due to the oxide and the tip artifact. The sizes including the oxide were deduced from TEM observations to be a width of 27 nm and a height of 6 nm with correction for the thickness of the oxide. The residual difference of 8 nm between the width determined using AFM and that determined using TEM including the oxide was ascribed to the tip artifact. The results enable us to determine the actual size of the islands from their AFM images. (c) 2007 American Institute of Physics.