Evidence of many-body, fermi-energy edge singularity in InN films grown on GaN buffer layers
Evidence of many-body, fermi-energy edge singularity in InN films grown on GaN buffer layers
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GaN 缓冲层上生长的 InN 薄膜中多体费米能边缘奇点的证据
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
J. Khurgin
中科院分区：
文献类型：
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作者：
Xiaodong Mu;Yujie J. Ding;Kejia Wang;Debdeep Jena;J. Khurgin
我们观察到在接近电子费米能处光致发光强度的强烈增强，这是由于InN薄膜中空穴的局域化导致辐射复合的k选择定则被打破的结果。
We observed the strong enhancement of photoluminescence intensities close to electron Fermi energy as the result of the breakdown of k-selection rule for radiaitive recombination due to the localization of holes in InN films.