Ultraviolet laser damage properties of single-layer SiO2 film grown by atomic layer deposition
Ultraviolet laser damage properties of single-layer SiO2 film grown by atomic layer deposition
复制标题
原子层沉积单层SiO2薄膜的紫外激光损伤特性
DOI：
10.1364/ome.400448
复制
发表时间：
2020-08-01
影响因子：
2.8
通讯作者：
Li, Yaguo
中科院分区：
文献类型：
--
作者：
Geng, Feng;Cheng, Haipeng;Li, Yaguo
研究了单层原子层沉积（ALD）SiO2 薄膜的光学性能和紫外激光损伤。高透明度的 ALD SiO2 薄膜在 355nm 处表现出弱吸收。激光量热仪测量的 355 nm 处的吸收随薄膜厚度线性变化，吸收系数约为 0.76 ppm/nm。这种吸收被认为源自 ALD SiO2 薄膜中的各种点缺陷。傅里叶变换红外 (FTIR) 光谱证实 ALD SiO2 薄膜中存在点缺陷，包括非桥接氧原子和残留的 OH 基团。研究了 355 nm 纳秒激光对 ALD SiO2 薄膜造成的损伤。损伤阈值和损伤形貌表明，激光诱导的 ALD 薄膜损伤与点缺陷簇有关，点缺陷簇可以吸收足够的激光能量以在 ALD 薄膜中引发微爆炸。此外，ALD 薄膜还采用亚纳秒紫外激光进行调节。经过亚纳秒激光调节后，抗损伤能力得到显着改善。激光调节至3 J/cm2后，535 nm厚的ALD薄膜的损伤阈值从5.5 J/cm2增加到14.9 J/cm2，改善了约170%。亚纳秒紫外激光对点缺陷的退火被认为是耐损伤性提高的原因。
Optical properties and ultraviolet laser damage of single-layer atomic layer deposition (ALD) SiO2 films were investigated. ALD SiO2 films of high transparency shows weak absorption at 355nm. The absorption at 355 nm measured by laser calorimeter varies linearly with the film thickness with absorption coefficient of ∼0.76 ppm/nm. Such absorption is considered originating from various point defects in ALD SiO2 film. Fourier transform infrared (FTIR) spectra confirm the presence of point defects in ALD SiO2 films including non-bridging oxygen atoms and residual OH groups. Nanosecond laser-induced damage of ALD SiO2 film at 355 nm was investigated. The damage threshold and damage morphology suggest that laser-induced damage of ALD film is associated with point defect clusters which can absorb enough laser energy to initiate micro-explosion in ALD films. Furthermore, the ALD films were conditioned with sub-nanosecond ultraviolet laser. Significant improvement in damage resistance has been demonstrated after sub-nanosecond laser conditioning. After laser conditioning to 3 J/cm2, the damage threshold of 535 nm thick ALD film increased from 5.5 J/cm2 to 14.9 J/cm2 and improved about 170%. Annealing of point defects by sub-nanosecond ultraviolet laser is supposed to be the reason for the improvement of the damage resistance.