Performance estimation of junctionless multigate transistors
Performance estimation of junctionless multigate transistors
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DOI：
10.1016/j.sse.2009.12.003
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发表时间：
2010-02-01
影响因子：
1.7
通讯作者：
Colinge, Jean-Pierre
中科院分区：
文献类型：
--
作者：
Lee, Chi-Woo;Ferain, Isabelle;Colinge, Jean-Pierre
本文描述了一种称为“无结多栅极场效应晶体管（MuGFET）”的新晶体管概念的电特性仿真。该器件无结，制造工艺简单，变异性小，电性能优于传统的在源极和漏极处有PN结的反转模式器件。仿真结果表明，无结的MuGFET在未来的decananometer MOSFET应用中非常有前途。(C) 2009 Elsevier l.td版权所有
This paper describes the simulation of the electrical characteristics of a new transistor concept called the "junctionless Multigate Field-Effect Transistor (MuGFET)". The proposed device has no junctions, a simpler fabrication process, less variability and better electrical properties than classical inversion-mode devices with PN junctions at the source and drain The simulation results indicate that the junctionless MuGFET is a very promising candidate for future decananometer MOSFET applications. (C) 2009 Elsevier l.td All rights reserved