Room-temperature continuous-wave topological Dirac-vortex microcavity lasers on silicon.
Room-temperature continuous-wave topological Dirac-vortex microcavity lasers on silicon.
复制标题
DOI：
10.1038/s41377-023-01290-4
复制
发表时间：
2023-10-24
期刊：
影响因子：
--
通讯作者：
Sun X
中科院分区：
文献类型：
--
作者：
Ma J;Zhou T;Tang M;Li H;Zhang Z;Xi X;Martin M;Baron T;Liu H;Zhang Z;Chen S;Sun X
强大的激光光源是当代信息技术的基本组成部分。拓扑学的概念源于凝聚态物理，最近进入了光学领域，为具有更强稳健性的激光器提供了全新的设计原则。与拓扑超导体中著名的Majorana费米子类似，狄拉克涡旋态最近在被动光子系统中得到了研究，并被认为是一种很有希望的强健激光候选者。在这里，我们在单片生长在硅衬底上的InAs/InGaAs量子点材料上实验实现了拓扑Dirac-涡旋微腔激光器。我们观察到了电信波长的室温连续波线偏振垂直激光发射。我们证实了狄拉克-涡旋激光器的波长对于腔体大小的变化在拓扑上是健壮的，它的自由光谱范围违反了腔大小的普遍逆标度定律。这些激光器将在芯片上与cmos兼容的光子和光电子系统中发挥重要作用。实验上实现了第一台硅基拓扑结构的狄拉克-涡旋微腔激光器。这些激光器在室温连续波条件下工作，标志着向将拓扑激光器与与CMOS兼容的光电子系统集成迈出了重要的一步。
Robust laser sources are a fundamental building block for contemporary information technologies. Originating from condensed-matter physics, the concept of topology has recently entered the realm of optics, offering fundamentally new design principles for lasers with enhanced robustness. In analogy to the well-known Majorana fermions in topological superconductors, Dirac-vortex states have recently been investigated in passive photonic systems and are now considered as a promising candidate for robust lasers. Here, we experimentally realize the topological Dirac-vortex microcavity lasers in InAs/InGaAs quantum-dot materials monolithically grown on a silicon substrate. We observe room-temperature continuous-wave linearly polarized vertical laser emission at a telecom wavelength. We confirm that the wavelength of the Dirac-vortex laser is topologically robust against variations in the cavity size, and its free spectral range defies the universal inverse scaling law with the cavity size. These lasers will play an important role in CMOS-compatible photonic and optoelectronic systems on a chip. The first topological Dirac-vortex microcavity lasers on silicon are experimentally realized. Operating under room-temperature continuous-wave conditions, these lasers mark an important step toward integrating topological lasers with CMOS-compatible optoelectronic systems.
登录
查看更多内容
影响因子：
16.6
作者：
Kim HR;Hwang MS;Smirnova D;Jeong KY;Kivshar Y;Park HG
通讯作者：
Park HG
影响因子：
38.3
作者：
Ma, Jingwen;Xi, Xiang;Sun, Xiankai
通讯作者：
Sun, Xiankai
影响因子：
10.4
作者：
Mehrabad, Mahmoud Jalali;Foster, Andrew P.;Wilson, Luke R.
通讯作者：
Wilson, Luke R.
影响因子：
64.8
作者：
Pavesi, L;Dal Negro, L;Priolo, F
通讯作者：
Priolo, F
影响因子：
8.6
作者：
Hou, Chang-Yu;Chamon, Claudio;Mudry, Christopher
通讯作者：
Mudry, Christopher