Preparation of doped LaGaO3 films by pulsed laser deposition
Preparation of doped LaGaO3 films by pulsed laser deposition
复制标题
脉冲激光沉积法制备掺杂LaGaO3薄膜
DOI：
10.1016/s0257-8972(03)00158-0
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发表时间：
2003
影响因子：
5.4
通讯作者：
Y. Takita
中科院分区：
文献类型：
--
作者：
S. Kanazawa;T. Ito;Kenji Yamada;T. Ohkubo;Y. Nomoto;T. Ishihara;Y. Takita
掺杂lagao3氧化物被认为是一种很有前途的中温固体氧化物燃料电池电解质候选材料。采用脉冲激光沉积技术制备了La1−xSrxGa1−yMgyO3−(x+y)/2掺杂lagao3薄膜。研究了等离子体羽流在薄膜沉积过程中的动力学。根据环境压力的不同，羽头的估计速度在（0.5-1.5）×104m/s范围内。经1000°C退火6 h后，沉积在NiO衬底上的薄膜由许多颗粒组成，并获得了lagao3的晶体结构。通过二次离子质谱分析，发现目标物与薄膜的化学计量学略有不同。
Doped LaGaO3oxide is considered to be a promising candidate for an electrolyte in intermediate temperature operating solid oxide fuel cell. Doped LaGaO3films, with the composition La1−xSrxGa1−yMgyO3−(x+y)/2was prepared by the pulsed laser deposition technique. The dynamics of the plasma plume during the film deposition was investigated. The estimated velocity of the plume head was in the range of (0.5–1.5)×104m/s depending on ambient pressures. The films deposited on the NiO substrate consisted of many particles and crystalline structure of LaGaO3was obtained for post annealed films at 1000 °C for 6 h. A slight difference in stoichiometry between the target and the film was found by secondary ion mass spectroscopy.