AlGaN/GaN heterostructure field transistor for label-free detection of DNA hybridization
AlGaN/GaN heterostructure field transistor for label-free detection of DNA hybridization
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用于 DNA 杂交无标记检测的 AlGaN/GaN 异质结构场晶体管
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
W. Lu
中科院分区：
文献类型：
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作者：
Xuejin Wen;Shengnian Wang;Yuji Wang;L. Lee;W. Lu
本文演示了 AlGaN/GaN 异质结构场效应晶体管 (HFET) 生物传感器对单链脱氧核糖核酸 (ssDNA) 缀合的电检测。探针 ssDNA 分子经过硫醇基团修饰。探针分子的固定是通过传感区域的金膜薄层上的 S-Au 键合来实现的。固定和杂交过程首先在硅表面上进行，并通过荧光和原子力显微镜（AFM）成像进行检查。混合过程在 AlGaN/GaN HFET 上进行监控。当应用匹配的 ssDNA 溶液时，会观察到随时间变化的电流变化，而对于不匹配的 ssDNA 序列则没有观察到响应。 DNA 杂交过程主要是在最初几十秒内匹配的单链 DNA 序列之间的接合。此后，杂交过程以传质过程和固定探针 ssDNA 分子的饱和为主。
This paper demonstrates electrical detection of single strand deoxyribonucleic acid (ssDNA) conjugation by AlGaN/GaN heterostructure field effect transistor (HFET) biological sensors. The probe ssDNA molecules are modified by thiol groups. The immobilization of probe molecules is achieved by S-Au bonding on a thin layer of gold film in the sensing area. The immobilization and hybridization process are firstly implemented on Si surfaces and checked by fluorescent and atomic force microscopy (AFM) imaging. The hybridization process is monitored on AlGaN/GaN HFETs. Time-dependent current change is observed when a matched ssDNA solution is applied, while no response is observed for a mismatched ssDNA sequence. The DNA hybridization process is dominated by the conjugation between matched ssDNA sequences in the first few tens of seconds. After that, the hybridization process is dominated by mass transfer processes and saturation of the immobilized probe ssDNA molecules.