Thermal boundary resistance correlated with strain energy in individual Si film-wafer twist boundaries
Thermal boundary resistance correlated with strain energy in individual Si film-wafer twist boundaries
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DOI：
10.1016/j.mtphys.2018.08.002
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发表时间：
2018-08
影响因子：
11.5
通讯作者：
D. Xu;R. Hanus;Y. Xiao;S. Wang;G. J. Snyder;Q. Hao
中科院分区：
文献类型：
--
作者：
D. Xu;R. Hanus;Y. Xiao;S. Wang;G. J. Snyder;Q. Hao
纳米尺度界面，如多晶材料内的晶界（GB），在抑制声子热输运方面起着重要作用。晶界的界面热阻RK与晶界的原子结构密切相关，包括晶界间的取向差和晶界位错。沿着这条路线，我们对扭曲的SiGB进行了大量的分子动力学模拟。由于在散装材料中测量这种GB的挑战，这些模拟很少与实验数据进行比较。在这项工作中，一个超柔性的70 nm厚的硅薄膜热压到硅晶片上，以代表扭曲GB。测量薄膜-晶片界面的RK随薄膜和晶片之间的旋转角度的变化。实验数据进行了进一步的分析模型进行比较，以解释的measuredRK的扭转角的依赖。结果发现，晶界能的应变部分与测得的扭转角dependentRK相关。
Nanoscale interfaces, such as grain boundaries (GBs) within a polycrystalline material, play an important role in suppressing the phonon heat transport. The interfacial thermal resistanceRKof a GB has a strong dependence on the detailed interfacial atomic structure, including the misorientation between two grains and GB dislocations. Along this line, numerous molecular dynamics simulations onRKhave been carried out on a twist Si GB. Owing to the challenge of measuring such a GB within a bulk material, these simulations are rarely compared with experimental data. In this work, a super-flexible 70-nm-thick Si thin film was hot pressed onto a Si wafer to represent a twist GB. TheRKof the film-wafer interface was measured as a function of the rotation angle between the film and the wafer. The experimental data were further compared with an analytical model to interpret the twist angle dependence of the measuredRK. It was found that the strain part of the grain-boundary energy is correlated with the measured twist-angle-dependentRK.