Enhanced performance of ultra-thin Cu(In,Ga)Se2 solar cells deposited at low process temperature
Enhanced performance of ultra-thin Cu(In,Ga)Se2 solar cells deposited at low process temperature
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DOI：
10.1016/j.solmat.2014.08.045
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发表时间：
2015
影响因子：
6.9
通讯作者：
G. Yin;Varvara Brackmann;V. Hoffmann;M. Schmid
中科院分区：
文献类型：
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作者：
G. Yin;Varvara Brackmann;V. Hoffmann;M. Schmid
为了研究工艺温度对超薄（≤500 nm）Cu（In，Ga）Se 2（CIGSe）吸收体的生长和太阳能电池的相应性能的影响，将工艺温度分别设定为610 ℃和440 ℃。发现低的工艺温度（440 °C）可以减少Ga-In的相互扩散，并且因此导致比在610 °C的温度下更高的背[Ga]/（[Ga]+[In]）（[Ga]/[III]）分级。与在610 ° C下的较低的背[Ga]/[III]分级相比，在440 °C下的较高的背[Ga]/[III]分级被证明在电学和光学上都有助于太阳能电池的效率增强。这也意味着高的背[Ga]/[III]梯度有利于从背反射光产生的载流子的收集。
To investigate the process temperature on the growth of ultra-thin (≤500 nm) Cu(In,Ga)Se2(CIGSe) absorbers and the corresponding performance of solar cells, the process temperature was set to 610 °C and 440 °C, respectively. It was found that the low process temperature (440 °C) could reduce the inter-diffusion of Ga–In and thus result in a higher back [Ga]/([Ga]+[In]) ([Ga]/[III]) grading than at the temperature of 610 °C. The higher back [Ga]/[III] grading at 440 °C was evidenced to both electrically and optically contribute to the efficiency enhancement of the solar cells in contrast to the lower back [Ga]/[III] grading at 610 °C. It was also implied that the high back [Ga]/[III] grading was beneficial to the collection of carriers generated from the back-reflected light.