High-Efficiency Excitonic Emission with Deep-Ultraviolet Light from (001)-Oriented Diamond p–i–n Junction
High-Efficiency Excitonic Emission with Deep-Ultraviolet Light from (001)-Oriented Diamond p–i–n Junction
复制标题
(001) 取向金刚石 p–i–n 结的深紫外光高效激子发射
DOI：
10.1143/jjap.45.l1042
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发表时间：
2006
影响因子：
1.5
通讯作者：
H. Okushi
中科院分区：
文献类型：
--
作者：
T. Makino;N. Tokuda;H. Kato;M. Ogura;H. Watanabe;S. Ri;S. Yamasaki;H. Okushi
我们在室温下用深紫外光实现了以本征金刚石层为有源区的（001）取向金刚石发光二极管的高效激子发射。采用基于微波等离子体增强化学气相沉积的优化同外延生长技术，制备了掺硼p型、非掺本质和掺磷n型（p-i-n）结二极管。高性能的p-i-n结特性通过电流电压和电容电压特性得到了证实。在超过6 mA的正向电流下，由于自由激子重组，在240 nm左右产生了强烈的紫外光发射，而与报道的金刚石p-n结电致发光相比，来自深层的宽可见光发射被显著抑制。
We have realized high-efficiency excitonic emission with deep-UV light at room temperature for a (001)-oriented diamond light-emitting diode with an intrinsic diamond layer as an active region. The boron-doped p-type, non-doped intrinsic, and phosphorus-doped n-type ( p–i–n) junction diode structure was formed by applying an optimized homoepitaxial growth technique based on microwave plasma-enhanced chemical vapor deposition. High-performance p–i–n junction characteristics were confirmed from current–voltage and capacitance–voltage properties. A strong UV light emission at around 240 nm due to free exciton recombination was observed at a forward current of over 6 mA, while the broad visible light emission from deep levels was significantly suppressed compared to that of reported electroluminescence in diamond p–n junctions.