Interaction of silicon dangling bonds with insulating surfaces.
Interaction of silicon dangling bonds with insulating surfaces.
复制标题
硅悬键与绝缘表面的相互作用。
DOI：
--
复制
发表时间：
2004
影响因子：
8.6
通讯作者：
A. Shluger
中科院分区：
文献类型：
--
作者：
A. Foster;A. Y. Gal;J. Gale;Y. J. Lee;R. Nieminen;A. Shluger
采用第一性原理密度泛函理论计算方法，研究了悬挂键模型硅针尖与CaF2、Al_2O_3、TiO_2和MgO表面的相互作用。在每种情况下，最强的相互作用是与表面上最高的阴离子。我们证明这是由于表面阴离子的化学键的开始，这可以通过整个系统的电场来控制。结合我们的结果和以前对半导体表面的研究表明，使用悬挂键Si针尖可以在原子分辨非接触原子力显微镜中立即识别表面物种，并有助于选择性地测量与表面位置的短程相互作用。
We use first principles density functional theory calculations to study the interaction of a model dangling bond silicon tip with the surfaces of CaF2, Al2O3, TiO2, and MgO. In each case the strongest interaction is with the highest anions in the surface. We show that this is due to the onset of chemical bonding with the surface anions, which can be controlled by an electric field across the system. Combining our results and previous studies on semiconductor surfaces suggests that using dangling bond Si tips can provide immediate identification of surface species in atomically resolved noncontact atomic force microscopy and facilitate selective measurements of short-range interactions with surface sites.