Effects of excess electrons/holes on fracture toughness of single-crystal Si
Effects of excess electrons/holes on fracture toughness of single-crystal Si
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DOI：
10.1063/5.0123580
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发表时间：
2023-01-21
影响因子：
3.2
通讯作者：
Shimada, Takahiro
中科院分区：
文献类型：
--
作者：
Hirakata, Hiroyuki;Homma, Shigekazu;Shimada, Takahiro
该研究表明，通过电子束辐照向材料中注入多余的电子或空穴，可以提高材料的结合强度。为了确定多余电子/空穴对原子间键强度的影响，对单晶Si微柱进行了不同电子束辐照条件下的断裂韧性测试。电子束辐照下的断裂韧性比未辐照时提高4% ~ 11%。特别是，在井眼注入条件下进行的测试中，强度增加很大。此外，在过量电子/空穴掺杂Si的第一性原理抗拉强度计算中，理想抗拉强度随过量电子的注入而单调降低，随空穴的注入而单调增加。这与注孔条件下断裂韧性增加的实验结果在定性上是一致的。
This study demonstrates that bond strength can be enhanced by injecting excess electrons or holes into a material by electron beam irradiation. To determine the effect of excess electrons/holes on the interatomic bond strength, fracture toughness tests were performed on single-crystal Si micropillars under various electron-beam irradiation conditions. The fracture toughness under electron beam irradiation was 4%-11% higher than that under non-irradiated conditions. In particular, an increase in strength was large in tests performed under hole-injection conditions. Furthermore, in first-principles calculations of the tensile strength of excess electrons/hole-doped Si, the ideal tensile strength monotonically decreased with an injection in excess electrons and increased monotonically with the injection of holes. This is qualitatively consistent with the experimental result that the fracture toughness increases under hole-injection conditions.