Activation process and bonding mechanism of Si/ LiNbO3 and LiNbO3/LiNbO3 at room temperature
Activation process and bonding mechanism of Si/ LiNbO3 and LiNbO3/LiNbO3 at room temperature
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Si/LiNbO3和LiNbO3/LiNbO3的室温活化过程及成键机理
DOI：
10.1149/ma2005-01/11/523
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发表时间：
2006
期刊：
影响因子：
--
通讯作者：
Moon J. Kim
中科院分区：
文献类型：
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作者：
M. Howlader;T. Suga;Moon J. Kim
通过在室温下使用改进的表面激活键合(SAB)工艺来检查Si/LiNbO 3 和LiN4bO 3 /LiNbO 3 晶圆的晶圆级键合可行性。使用能量为 80 eV、电流为 3 A 的低能氩离子源，能够溅射清洁并在表面沉积 Fe 纳米层。目视检查表明，Si/LiNbO 3 的4英寸晶片的几乎整个区域都被键合。抗拉强度分布不均匀，在8-37 MPa范围内变化。在界面上观察到 5 nm 厚的非晶层。电子能量损失谱（EELS）分析显示了键合配合物的Fe原子的交联行为，这导致Si/LiNbO 3 和LiNbO 3 / LiNbO 3 之间在室温下具有高键合强度。
Wafer level bonding feasibility was examined for Si/LiNbO 3 and LiN4bO 3 /LiNbO 3 wafers by using a modified surface activated bonding (SAB) process at room temperature. A low energy argon ion source of 80 eV energy with 3 A amperage was used, which was capable of sputter cleaning and depositing Fe nanolayers on the surfaces. Visual inspection showed that almost the entire area of 4-inch wafers of Si/LiNbO 3 was bonded. The tensile strength distribution was inhomogeneous and it was varied in the range 8-37 MPa. An amorphous layer of 5 nm thick was observed across the interface. Electron energy loss spectrometry (EELS) analysis showed cross-linking behavior of Fe atoms of bonding mates, which was responsible for high bonding strength between Si/LiNbO 3 and LiNbO 3 / LiNbO 3 at room temperature.