Investigation of terahertz high Q-factor of all-dielectric metamaterials
Investigation of terahertz high Q-factor of all-dielectric metamaterials
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DOI：
10.1016/j.optlastec.2021.107570
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发表时间：
2021-10-05
影响因子：
5
通讯作者：
Liu, Feng
中科院分区：
文献类型：
--
作者：
Leng, Jin;Peng, Jun;Liu, Feng
研究了基于SiO2-Si非对称混合块的全介质超材料（ADM）的传输特性，包括结构参数、非对称度、载流子掺杂浓度和石墨烯费米能级对ADM传输特性的影响。非对称度在2-10 μ m范围内变化时，Fano共振的Q值可达270以上，振幅调制深度（MD）约为75%。硅的载流子浓度显著地影响激发的Fano共振的强度。当Si的载流子浓度为1 × 10 ~（14）cm ~（-3）时，激发的Fano共振最强，透射峰约为0.92。在均匀的石墨烯层的帮助下，Fano共振可以被有效地调制，当费米能级在0.01-0.3 eV范围内变化时，频率MD约为20%。这些结果可以帮助我们设计太赫兹高Q值器件，如传感器，滤波器和调制器。
We investigated the propagation properties of all-dielectric metamaterials (ADMs) based on a SiO2-Si asymmetric hybrid block, including the effects of structural parameters, asymmetrical degrees, carrier doping concentrations, and graphene Fermi levels. The Q-factor of Fano resonance reaches more than 270, and the amplitude modulation depth (MD) is about 75% if the asymmetric degree changes in the range of 2-10 mu m. The carrier concentration of silicon significantly affects the intensity of excited Fano resonance. When the carrier concentration of Si is 1 x 10(14) cm(-3), the excited Fano resonance is the strongest, and the transmission peak is about 0.92. With the help of a uniform graphene layer, the Fano resonance can be effectively modulated, the frequency MD is about 20% if the Fermi level changes in the scope of 0.01-0.3 eV. These results can help us to design THz high Q factor devices, such as sensors, filters, and modulators.