Properties of Dy3+‐Doped Ge–As–Ga–Se Chalcogenide Glasses
Properties of Dy3+‐Doped Ge–As–Ga–Se Chalcogenide Glasses
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DOI:
10.1111/j.1551-2916.2006.01070.x
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发表时间:
2006-08
影响因子:
3.9
通讯作者:
Ren Jing;Yang Guang;Zeng Hui-dan;Zhang Xianghua;Y. Yunxia;C. Guorong
中科院分区:
文献类型:
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作者:
Ren Jing;Yang Guang;Zeng Hui-dan;Zhang Xianghua;Y. Yunxia;C. Guorong
In the present work, properties of Dy3+-doped chalcogenide glasses as a stoichiometric formula of (0.9−x)GeSe2–xAsSe3/2–0.1GaSe3/2 (x=0.1, 0.2, 0.3, 0.4, 0.5, 0.6) were investigated as a comparison with the previously studied Ge–Ga–Se system. Property measurements include differential thermal analysis, density, Vis-NIR and IR transmission spectra, and fluorescent emission spectra. Judd–Ofelt analysis was performed using the calculated oscillator strengths of glasses. All properties of glasses show obvious dependence on compositions. Especially, the improved devitrification resistance and the longer fluorescence life at 1.34 μm emission were observed with the increasing As content. Noticeably, abnormal changes in some properties occurred to the glass whose average coordination number corresponds to the threshold of two-dimensional–three-dimensional topological phase transition.