High-Performance Solution-Processed Amorphous-Oxide-Semiconductor TFTs with Organic Polymeric Gate Dielectrics
High-Performance Solution-Processed Amorphous-Oxide-Semiconductor TFTs with Organic Polymeric Gate Dielectrics
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DOI：
10.1002/aelm.201400024
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发表时间：
2015-02-01
影响因子：
6.2
通讯作者：
Sirringhaus, Henning
中科院分区：
文献类型：
--
作者：
Pecunia, Vincenzo;Banger, Kulbinder;Sirringhaus, Henning
采用有机聚合物栅极材料的非晶金属氧化物晶体管在溶液和低温下的一般优异性能（
The general outstanding performance of amorphous-metal-oxide transistors utilizing organic polymeric gate dielectrics processed from solution and at low temperature (