Development of thermoelectric thin films and characterization methods
Development of thermoelectric thin films and characterization methods
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热电薄膜及其表征方法的发展
DOI：
10.1088/1742-6596/1407/1/012055
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
N Kawamoto and D Golberg
中科院分区：
文献类型：
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作者：
T Mori;T Aizawa;S Mitani;N Tsujii;I Ohkubo;T Tynell;Y Kakefuda;T Baba;M Mitome;N Kawamoto and D Golberg
本工作报道了硼化物、锗化物、锰化合物等无机热电材料薄膜的制备及其热电性能的表征。我们利用一种独特的高温分子束磊晶（MBE）装置来成长六硼化物薄膜和锰锗化物薄膜。磁性锰基合金薄膜也使用溅射生长，因为我们感兴趣的是利用磁性开发热电材料的可能性。
This work reports on the fabrication of thin films of inorganic thermoelectric materials like borides, germanides, manganese compounds, and characterization of their thermoelectric properties. We have utilized a unique high temperature molecular beam epitaxy (MBE) apparatus to grow hexaboride thin films and manganese germanides. Magnetic manganese based alloy thin films were also grown using sputtering, since we are interested in the possibilities of utilizing magnetism to develop thermoelectric materials.