Observation of non-radiative de-excitation processes in silicon nanocrystals
Observation of non-radiative de-excitation processes in silicon nanocrystals
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硅纳米晶非辐射退激过程的观察
DOI：
10.1002/pssa.200881306
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
Knights A
中科院分区：
文献类型：
--
作者：
Knights A
我们描述了非辐射去激发机制对 SiO2 中形成的硅纳米晶体的光发射的影响。通过磷离子注入故意引入的自由载流子的俄歇激发显示出随着磷浓度的增加而单调增加，这可以使用简单的统计方法进行充分建模。我们还报告了随着紫外线辐射暴露的增加，纳米晶体发光强度降低，并认为这种现象是由于 Si/SiO2 网络中引入非辐射缺陷造成的。紫外线辐射的影响因样品制备而异。 （© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
We describe the impact of non‐radiative de‐excitation mechanisms on the optical emission from silicon nanocrystals formed in SiO2. Auger excitation via free carriers deliberately introduced through phosphorus ion implantation, shows a monotonic increase with increasing phosphorus concentration which can be modelled adequately using a simple statistical approach. We also report a reduction in nanocrystal luminescence intensity with increasing exposure to UV radiation and suggest this phenomenon results from the introduction of non‐radiative defects in the Si/SiO2network. The effect of UV radiation varies significantly depending on the sample preparation. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)