Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arrays
Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arrays
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DOI：
10.1063/1.2816891
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发表时间：
2007-11-26
影响因子：
4
通讯作者：
Gilchrist, James F.
中科院分区：
文献类型：
--
作者：
Ee, Yik-Khoon;Arif, Ronald A.;Gilchrist, James F.
实验证明了SiO2/聚苯乙烯微球可提高InGaN量子阱发光二极管（led）的光提取效率。将SiO2/聚苯乙烯微透镜阵列应用于InGaN量子阱led上，通过快速对流沉积，增加了有效光子逃逸锥，降低了菲涅耳反射。用SiO2/聚苯乙烯微球微透镜阵列制备的InGaN量子阱发光二极管输出功率提高了219%，峰值波长为480 nm。(C) 2007年美国物理研究所。
Improvement of light extraction efficiency of InGaN quantum wells light emitting diodes (LEDs) using SiO2/polystyrene microspheres was demonstrated experimentally. The utilization of SiO2/polystyrene microlens arrays on InGaN quantum wells LEDs, deposited via rapid convective deposition, allows the increase of the effective photon escape cone and reduction in the Fresnel reflection. Improvement of output power by 219% for InGaN quantum wells LEDs emitting at peak wavelength of 480 nm with SiO2/polystyrene microspheres microlens arrays was demonstrated. (C) 2007 American Institute of Physics.