InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications

InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications
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DOI:
10.1016/j.mejo.2008.06.058
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发表时间:
2009-03
期刊:
Microelectron. J.
影响因子:
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通讯作者:
P. Carrington;V. A. Solov'ev;Q. Zhuang;S. Ivanov;A. Krier
P. Carrington;V. A. Solov'ev;Q. Zhuang;S. Ivanov;A. Krier
中科院分区:
其他
文献类型:
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作者:
P. Carrington;V. A. Solov'ev;Q. Zhuang;S. Ivanov;A. Krier

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