Design methodology of high-gain III-V digital alloy avalanche photodiodes
Design methodology of high-gain III-V digital alloy avalanche photodiodes
复制标题
高增益III-V族数字合金雪崩光电二极管的设计方法
DOI：
10.1117/12.2578959
复制
发表时间：
2021
期刊：
影响因子：
--
通讯作者：
Ghosh, Avik W.
中科院分区：
文献类型：
--
作者：
Ahmed, Sheikh Z.;Zheng, Jiyuan;Tan, Yaohua;Campbell, Joe C.;Ghosh, Avik W.
许多III-V型数字合金雪崩光电二极管实验证明了非常低的过量噪声。小间隙的存在和价带有效质量的增强导致了性能的增强。利用第一性原理计算和环境相关的紧密结合模型研究了这些性能与材料参数（如应力）的相关性。此外，我们还利用负能量场理论研究了这些小缺口和质量增强对数字合金中电子隧穿和声子散射过程的影响。根据我们的计算，我们提出了一些经验不等式来量化这种小间隙在使器件单极和高增益方面的有效性。
Many III-V digital alloy avalanche photodiodes have experimentally demonstrated very low excess noise. The presence of minigaps and enhanced valence band effective mass leads to the enhanced performance. Using first principle calculations and environment-dependent tight binding model we study the correlation of these properties with material parameters like stress. Furthermore, using NEGF formalism we study how these minigaps and mass enhancement impact the electron tunneling and phonon scattering processes in digital alloys. Based on our calculations, we propose some empirical inequalities for quantifying the effectiveness of such minigaps in making the device unipolar and thus high gain.