Growth of Highly (100)-Oriented SrTiO3 Thin Films on Si(111) Substrates Without Buffer Layer
Growth of Highly (100)-Oriented SrTiO3 Thin Films on Si(111) Substrates Without Buffer Layer
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无缓冲层的 Si(111) 衬底上高度 (100) 取向的 SrTiO3 薄膜的生长
DOI：
10.1111/jace.12912
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
N. Saito
中科院分区：
文献类型：
--
作者：
G. Panomsuwan;O. Takai;N. Saito
采用电子回旋共振离子束溅射沉积法在Si（111）衬底上直接生长了SrTiO3（STO）薄膜。生长温度在700 ~ 850℃范围内变化，其他参数保持不变。X射线结构分析表明，生长温度对（100）取向的调谐程度有很大影响。在800°C下生长的STO薄膜具有最高的（100）取向度（98%）和强大的（100）纤维织构。在表面形貌上，板状晶粒的发育与（100）取向度的变化有良好的相关性。此外，还对Au/STO/Si（111）金属-绝缘体-半导体电容器的漏电流-电压特性进行了详细的研究和讨论。
The SrTiO3(STO) thin films were directly grown on Si(111) substrates without buffer layer by an electron‐cyclotron‐resonance ion beam sputter deposition. The growth temperature was varied from 700°C to 850°C, while other parameters were kept unchanged. X‐ray structural analysis demonstrates that the growth temperature has a strong influence in tuning degree of (100) orientation. The STO film grown at 800°C is found to be the highest degree of (100) orientation (98%) and a strong (100) fiber texture. For the surface morphology, the development of plate‐shaped grains reveals a good correlation with the change in the degree of (100) orientation. Moreover, the leakage current–voltage characteristics of the Au/STO/Si(111) metal‐insulator‐semiconductor capacitors are investigated and discussed in considerable detail.