An overview of non-volatile memory technology and the implication for tools and architectures
An overview of non-volatile memory technology and the implication for tools and architectures
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DOI：
10.1109/date.2009.5090761
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发表时间：
2009-04
期刊：
影响因子：
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通讯作者：
Hai Helen Li;Yiran Chen
中科院分区：
文献类型：
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作者：
Hai Helen Li;Yiran Chen
在通用存储器发展的竞争中，新型非易失性存储器技术越来越受到半导体行业的重视。我们以自旋转移扭矩随机存取存储器（STT-RAM）和电阻随机存取存储器（R-RAM）为例，讨论了新兴的非易失性存储器对工具和体系结构的影响。详细讨论了器件和存储单元建模、器件/电路协同设计考虑和新型存储体系结构三个方面。这些讨论的目标是设计一个高密度，低功耗，高性能的非易失性存储器，具有简单的结构和最小的电路设计复杂性。
Novel nonvolatile memory technologies are gaining significant attentions from semiconductor industry in the competition of universal memory development. We used Spin-Transfer Torque Random Access Memory (STT-RAM) and Resistive Random Access Memory (R-RAM) as examples to discuss the implication of emerging nonvolatile memory for tools and architectures. Three aspects, including device and memory cell modeling, device/circuit co-design consideration and novel memory architecture, are discussed in details. The goal of these discussions is to design a high-density, low-power, high-performance nonvolatile memory with simple architecture and minimized circuit design complexity.