Spin‐Dependent Charge Transport in 1D Chiral Hybrid Lead‐Bromide Perovskite with High Stability
Spin‐Dependent Charge Transport in 1D Chiral Hybrid Lead‐Bromide Perovskite with High Stability
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DOI：
10.1002/adfm.202104605
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发表时间：
2021-08
影响因子：
19
通讯作者：
Ying Lu;Qian Wang;Ruyi Chen;L. Qiao;Fo-Ling Zhou;Xia Yang;Dong Wang;H. Cao;Wanli He;F. Pan;Zhou Yang;C. Song
中科院分区：
文献类型：
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作者：
Ying Lu;Qian Wang;Ruyi Chen;L. Qiao;Fo-Ling Zhou;Xia Yang;Dong Wang;H. Cao;Wanli He;F. Pan;Zhou Yang;C. Song
通过手性诱导自旋选择性（CISS）效应，研究了手性2D碘化物杂化钙钛矿（HOIP）中自旋相关的电荷输运，沿着潜在的电子应用，为自旋电子学的研究开辟了新的途径.尽管高自旋极化电流增强，碘离子的固有氧化倾向给电子器件的稳定性和寿命带来严重问题。在这里，探索了具有手性R/S-甲基苄基铵（MBA）的溴化铅钙钛矿杂化物，即（R/S-MBA）PbBr 3中的自旋相关电荷输运性质。与层状2D碘化物钙钛矿（R/S-MBA）2 PbI 4不同，其经历明显的晶体退化沿着，（R/S-MBA）PbBr 3即使在氧化、潮湿和高温环境中也保持良好的结晶度，这是由于溴化物的费米能级低于碘化物。磁导原子力显微镜显示自旋过滤效率高达90%，1个月后衰减可忽略不计。这一工作将自旋输运拓展到具有更高稳定性的手性溴代钙钛矿，从而为HOIP在自旋电子学中的实际应用提供了重要支持。
Spin‐dependent charge transport, along with the potential electronic applications, is investigated in chiral 2D iodide hybrid organic/inorganic perovskites (HOIPs) via the chirality‐induced spin selectivity (CISS) effect, paving a new way in spintronics. Despite the high spin‐polarized current enhancement, the intrinsic oxidation tendency of iodide ions brings about severe problems in the stability and lifetime of electronic devices. Here, spin‐dependent charge transport properties in lead‐bromide perovskites hybrid with chiral R/S‐methylbenzylammonium (MBA), that is, (R/S‐MBA)PbBr3 are explored. Distinct from layered 2D iodide perovskites (R/S‐MBA)2PbI4 which experience obvious crystal degradation along time, (R/S‐MBA)PbBr3 maintain good crystallinity even in the oxidative, humid, and high‐temperature environment due to the lower Fermi level of bromide than iodide. Magnetic conductive atomic force microscopy displays a spin filtration efficiency as high as 90%, showing negligible decay after 1 month. This work expands the spin transport to chiral bromide perovskites with higher stability, and thus provides significant support for the practical application of HOIPs in spintronics.