Comparison of crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te nanocrystalline thin films: Effects of homogeneous irradiation with an electron beam
Comparison of crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te nanocrystalline thin films: Effects of homogeneous irradiation with an electron beam
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DOI：
10.1063/1.4881676
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发表时间：
2014-06
影响因子：
3.2
通讯作者：
M. Takashiri;K. Imai;Masato Uyama;H. Hagino;Saburo Tanaka;K. Miyazaki;Y. Nishi
中科院分区：
文献类型：
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作者：
M. Takashiri;K. Imai;Masato Uyama;H. Hagino;Saburo Tanaka;K. Miyazaki;Y. Nishi
The effects of homogenous electron beam (EB) irradiation on the crystal growth and thermoelectric properties of n-type Bi-Se-Te and p-type Bi-Sb-Te thin films were investigated. Both types of thin films were prepared by flash evaporation, after which homogeneous EB irradiation was performed at an acceleration voltage of 0.17 MeV. For the n-type thin films, nanodots with a diameter of less than 10 nm were observed on the surface of rice-like nanostructures, and crystallization and crystal orientation were improved by EB irradiation. The resulting enhancement of mobility led to increased electrical conductivity and thermoelectric power factor for the n-type thin films. In contrast, the crystallization and crystal orientation of the p-type thin films were not influenced by EB irradiation. The carrier concentration increased and mobility decreased with increased EB irradiation dose, possibly because of the generation of defects. As a result, the thermoelectric power factor of p-type thin films was not improve...
