Tunneling and impact ionization at high electric fields in abrupt GaAs p-i-n structures
Tunneling and impact ionization at high electric fields in abrupt GaAs p-i-n structures
复制标题
突变 GaAs p-i-n 结构中高电场下的隧道和碰撞电离
DOI：
--
复制
发表时间：
1997
期刊：
影响因子：
--
通讯作者：
D. Liebig
中科院分区：
文献类型：
--
作者：
C. Benz;M. Claassen;D. Liebig
用分子束外延技术制备了掺杂跃迁非常突然、准本征区长度不同的GaAsp-i-n结构。对于具有超薄本征区的结构，实验测得的隧道电流最高电场为1.9 mV/cm，与修正的凯恩模型符合得很好。利用计算得到的隧道电流与实验测得的总电流之差，对高电场下的蒙特卡罗模拟程序进行了拟合。给出了理想的均匀场电离率，实验验证了电离率可达1.3 mV/cm。
GaAs p-i-n structures with very abrupt doping transitions and different lengths of the quasi-intrinsic zone have been fabricated by molecular beam epitaxy technology. For structures with ultra-thin intrinsic zones, tunnel currents were determined experimentally up to electric fields of 1.9 MV/cm, in good agreement with a modified Kane model. The difference of calculated tunnel current and measured total current in structures which also perform impact ionization is used to fit a Monte Carlo simulation program at high electric fields. Resulting idealized homogeneous-field ionization rates are given which are experimentally verified up to fields of 1.3 MV/cm.