Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing
Selective-Area Epitaxy of Pure Wurtzite InP Nanowires: High Quantum Efficiency and Room-Temperature Lasing
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DOI：
10.1021/nl5021409
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发表时间：
2014-09-01
期刊：
影响因子：
10.8
通讯作者：
Jagadish, Chennupati
中科院分区：
文献类型：
--
作者：
Gao, Qian;Saxena, Dhruv;Jagadish, Chennupati
报道了用选择性区域金属有机气相外延生长直径为80~600 nm的无层错、无锥度的纤锌矿InP纳米线，实验测得其量子效率接近50%，与InP外延层相当。我们还演示了这些纳米线的室温、光子模式激光。它们优异的结构和光学性质为基础量子光学和光电子器件开辟了新的可能性。
We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metalorganic vapor-phase epitaxy and experimentally determine a quantum efficiency of similar to 50%, which is on par with InP epilayers. We also demonstrate room-temperature, photonic mode lasing from these nanowires. Their excellent structural and optical quality opens up new possibilities for both fundamental quantum optics and optoelectronic devices.