Evidence for a Surface-State Exciton on GaAs(110)
Evidence for a Surface-State Exciton on GaAs(110)
复制标题
GaAs 表面态激子的证据 (110)
DOI：
10.1103/physrevlett.35.117
复制
发表时间：
1975
影响因子：
8.6
通讯作者：
J. Anderson
中科院分区：
文献类型：
--
作者：
G. Lapeyre;J. Anderson
在$s$和$p$极化的GaAs （$\overline{1}\overline{1}0$）和（110）面获得的同步辐射光发射数据表明，当光子能量通过Ga-$3d$-核的本征表面态激发阈值扫描时，在价带最大值处和低于价带最大值处初始态的价电子发射增强。这种增强被解释为与Ga悬空键相关的核心表面激子。
Synchrotron-radiation photoemission data are obtained from GaAs ($\overline{1}\overline{1}0$) and (110) faces for $s$ and $p$ polarization which show an enhancement of valence-electron emission for initial states at and below the valence-band maximum when the photon energy is scanned through the threshold for Ga-$3d$-core to intrinsic-surface-state excitations. The enhancement is interpreted as a core surface exciton associated with the Ga dangling bonds.