Fabrication of SU-8 Microtowers for a 100-Turn Toroid Inductor
Fabrication of SU-8 Microtowers for a 100-Turn Toroid Inductor
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用于 100 匝环形电感器的 SU-8 微型塔的制造
DOI：
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发表时间：
2018
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通讯作者：
J. Kim
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文献类型：
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作者：
J. Kim
本文介绍了一种在 $mathbf{1000} mu mathbf{m}$ 至 $mathbf{2000} mu mathbf{m}$ 高度范围内制造极厚 SU-8 光刻胶工艺的高深宽比微结构。为了区分低于 $mathbf{1000} mu mathbf{m}$ 的传统高纵横比高层结构，采用新术语“微型塔”来描述高度为 $mathbf{1000} mu mathbf{m}$ 或更高的微结构。在制造过程中，为了避免厚光刻胶的长时间软烘烤过程并提供均匀的膜厚，采用了SU-8干膜。研究了使用丙烯酸滤光片进行紫外线 (UV) 光照射时适用波长谱的透明度。制造了 $mathbf{1000}-mu mathbf{m}$ 高的微型塔阵列，没有使用丙烯酸过滤器，导致侧壁呈波浪状。而 $mathbf{2000}-mu mathbf{m}$ 高的微型塔阵列是用丙烯酸过滤器制造的，形成直侧壁。通过采用丙烯酸滤光片的紫外曝光，还成功制造了 $mathbf{1500}-mu mathbf{m}$ 长倾斜 V 柱阵列，并且所制造的微结构具有作为微流体中微过滤器的潜在用途。成功制造了最先进的 100 匝环形电感器并进行了电气特性分析，在 0.1 至 10 MHz 频率范围内的平均电感为 950 nH。测得 0.1 MHz 时的低频电阻为 $mathbf{5.4} Omega$，60 MHz 时的品质因数为 22。
This paper presents a fabrication of extremely thick SU-8 photoresist process in a height range Of $mathbf{1000} mu mathbf{m}$ to $mathbf{2000} mu mathbf{m}$ high-aspect-ratio microstructures. To differentiate conventional high-aspect-ratio tall structures less than $mathbf{1000} mu mathbf{m}$, a new term, microtower, was adopted for the microstructure with a height of $mathbf{1000} mu mathbf{m}$ or taller. In fabrication process, to avoid a long softbaking process from the thick photoresist and provide uniform film thickness, an SU-8 dry film was adopted. Ultra-violet (UV) light exposure with an acrylic filter was investigated in terms of transparency of the applicable wavelength spectrum. An array of the $mathbf{1000}-mu mathbf{m}$ tall microtower array was fabricated without the acrylic filter resulting in wavy sidewalls. Whereas an array of $mathbf{2000}-mu mathbf{m}$ tall microtower was fabricated with the acrylic filter resulting straight sidewalls. An array of $mathbf{1500}-mu mathbf{m}$ -long inclined V-pillars was also successfully fabricated by adopting the UV exposure with the acrylic filter, and the fabricated microstructures have potential use as a microfilter in microfluidics. A state-of-art 100-turn toroid inductor was successfully fabricated and electrically characterized resulting an average inductance of 950 nH in the frequency range of 0.1 to 10 MHz. A low-frequency resistance of $mathbf{5.4} Omega$ at 0.1 MHz and a quality factor of 22 at 60 MHz were measured.