Spin injection through energy-band symmetry matching with high spin polarization in atomically controlled ferromagnet/ferromagnet/semiconductor structures
Spin injection through energy-band symmetry matching with high spin polarization in atomically controlled ferromagnet/ferromagnet/semiconductor structures
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DOI：
10.1038/s41427-020-0228-5
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发表时间：
2020-06
影响因子：
9.7
通讯作者：
M. Yamada;F. Kuroda;M. Tsukahara;S. Yamada;T. Fukushima;K. Sawano;T. Oguchi;K. Hamaya
中科院分区：
文献类型：
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作者：
M. Yamada;F. Kuroda;M. Tsukahara;S. Yamada;T. Fukushima;K. Sawano;T. Oguchi;K. Hamaya
自旋极化电子从铁磁体注入到半导体中的电注入通常是通过具有绝缘体势垒层的隧道过程来证明的，这可以控制器件的性能，包括电极上的电力。在这里，我们展示了一种高效的半导体自旋注入技术，该技术使用具有低电阻肖特基隧道势垒的原子控制铁磁体/铁磁体/半导体异质结构。基于顶部高自旋极化铁磁体和半导体之间的电子带的对称匹配，横向自旋阀器件的自旋信号强度比传统铁磁体/半导体结构的自旋信号强度提高了一个数量级。这种方法为同时实现半导体器件中电极的高效自旋注入和低功率提供了一种新的解决方案，从而导致了室温下的新型半导体自旋电子结构。
Electrical injection of spin-polarized electrons from ferromagnets into semiconductors has been generally demonstrated through a tunneling process with insulator barrier layers that can dominate the device performance, including the electric power at the electrodes. Here, we show an efficient spin injection technique for a semiconductor using an atomically controlled ferromagnet/ferromagnet/semiconductor heterostructure with low-resistive Schottky-tunnel barriers. On the basis of symmetry matching of the electronic bands between the top highly spin-polarized ferromagnet and the semiconductor, the magnitude of the spin signals in lateral spin-valve devices can be enhanced by up to one order of magnitude compared to those obtained with conventional ferromagnet/semiconductor structures. This approach provides a new solution for the simultaneous achievement of highly efficient spin injection and low electric power at the electrodes in semiconductor devices, leading to novel semiconductor spintronic architectures at room temperature.