Inhibitory effect of cetyltrimethylammonium bromide on the electrochemical migration of tin in thin electrolyte layers containing chloride ions
Inhibitory effect of cetyltrimethylammonium bromide on the electrochemical migration of tin in thin electrolyte layers containing chloride ions
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十六烷基三甲基溴化铵对含氯离子电解质薄层中锡电化学迁移的抑制作用
DOI：
10.1016/j.corsci.2017.02.013
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发表时间：
2017-04-01
影响因子：
8.3
通讯作者：
Guo, Xingpeng
中科院分区：
文献类型：
--
作者：
Liao, Bokai;Chen, Zhenyu;Guo, Xingpeng
本文提出了一种新的策略，包括引入常见的阳离子表面活性剂十六烷基三甲基溴化铵（十六烷基三甲基溴化铵，CTAB），以抑制锡的电化学迁移（ECM）在含氯离子的薄电解质层。采用原位电化学和光学技术以及非原位表征方法研究了不同浓度的十六烷基三甲基溴化铵（CTAB）在不同偏压下对锡ECM的抑制作用。结果表明，十六烷基三甲基溴化铵（CTAB）能有效抑制锡电解加工，并通过选择性吸附作用影响锡电解加工过程中的电沉积。提出了解释CTAB的有益作用的机制。(C)2017由Elsevier Ltd.出版
This paper presents a new strategy involving the introduction of the common cationic surfactant cetyltrimethylammonium bromide (cetrimonium bromide, CTAB) to inhibit the electrochemical migradon (ECM) of tin in thin electrolyte layers containing chloride ions. The inhibitory effect of different CTAB concentrations on tin ECM under different bias voltages was evaluated using in situ electrochemical and optical techniques, as well as ex situ characterizations. Results showed that CTAB can effectively inhibit tin ECM, and CTAB affected the electrodeposition during tin ECM by selective adsorption. Mechanisms were proposed to explain the beneficial role of CTAB. (C) 2017 Published by Elsevier Ltd.