Analysis of Metal Work-Function Modulation Effect in Reconfigurable Field-Effect Transistor
Analysis of Metal Work-Function Modulation Effect in Reconfigurable Field-Effect Transistor
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DOI:
10.1109/ted.2020.3007364
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发表时间:
2020-09
影响因子:
3.1
通讯作者:
Xianglong Li;Yabin Sun;Ziyu Liu;Xiaojin Li;Yanling Shi;Teng Wang;Jun Xu
中科院分区:
文献类型:
--
作者:
Xianglong Li;Yabin Sun;Ziyu Liu;Xiaojin Li;Yanling Shi;Teng Wang;Jun Xu
Work-function modulation in a reconfigurable field-effect transistor (RFET) is investigated by 3-D TCAD simulations. A significant work-function dependence is found in the critical electrical performances of RFET. The results show that the ON-state drive current ${I}_{ \mathrm{\scriptscriptstyle ON}}$ is mainly dominated by the control gate (CG) and source work function, while the OFF-state leakage current ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ is dominated by program gate and drain work function. With the work-function regulation, more flexible electrical characteristics among both n- and p-type configurations can be obtained, and an RFET with strict symmetric ON-state current and ${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ ratio, that is, ( ${I}_{ \mathrm{\scriptscriptstyle ON}}{)}_{\text {n}}:{(}{I}_{ \mathrm{\scriptscriptstyle ON}}{)}_{\text {p}} = {(}I_{ \mathrm{\scriptscriptstyle OFF}}{)}_{\text {n}}:{(}{I}_{ \mathrm{\scriptscriptstyle OFF}}{)}_{\text {p}} = {1}:{1}$ , has been realized in this work. The underlying physical mechanism is explored, and the corresponding performance of the application in logic and memory is discussed. Moreover, the work-function regulation in CG and source can be recognized as an effective method to subtle tweak noise margin of electrical systems.