Analysis of Metal Work-Function Modulation Effect in Reconfigurable Field-Effect Transistor

Analysis of Metal Work-Function Modulation Effect in Reconfigurable Field-Effect Transistor
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DOI:
10.1109/ted.2020.3007364
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发表时间:
2020-09
影响因子:
3.1
通讯作者:
Xianglong Li;Yabin Sun;Ziyu Liu;Xiaojin Li;Yanling Shi;Teng Wang;Jun Xu
Xianglong Li;Yabin Sun;Ziyu Liu;Xiaojin Li;Yanling Shi;Teng Wang;Jun Xu
中科院分区:
工程技术2区
文献类型:
--
作者:
Xianglong Li;Yabin Sun;Ziyu Liu;Xiaojin Li;Yanling Shi;Teng Wang;Jun Xu

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通过 3-D TCAD 模拟研究可重构场效应晶体管 (RFET) 中的功函数调制。 RFET 的关键电气性能具有显着的功函数依赖性。结果表明,导通状态驱动电流${I}_{\mathrm{\scriptscriptstyle ON}}$主要由控制栅极(CG)和源极功函数主导,而断态漏电流${I}_{\mathrm{\scriptscriptstyle OFF}}$主要由程序栅极和漏极功函数主导。通过功函数调节,可以在 n 型和 p 型配置之间获得更灵活的电气特性,并获得具有严格对称导通电流和 ${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ 比率的 RFET,即 ( ${I}_{ \mathrm{\scriptscriptstyle ON}}{)}_{\text {n}}:{(}{I}_{ \mathrm{\scriptscriptstyle ON}}{)}_{\text {p}} = {(}I_{ \mathrm{\scriptscriptstyle OFF}}{)}_{\text {n}}:{(}{I}_{ \mathrm{\scriptscriptstyle OFF}}{)}_{\text {p}} = {1}:{1}$ ,已在本工作中实现。探讨了底层物理机制,并讨论了应用程序在逻辑和内存方面的相应性能。此外,CG 和源中的功函数调节可以被认为是微妙调整电气系统噪声容限的有效方法。
Work-function modulation in a reconfigurable field-effect transistor (RFET) is investigated by 3-D TCAD simulations. A significant work-function dependence is found in the critical electrical performances of RFET. The results show that the ON-state drive current ${I}_{ \mathrm{\scriptscriptstyle ON}}$ is mainly dominated by the control gate (CG) and source work function, while the OFF-state leakage current ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ is dominated by program gate and drain work function. With the work-function regulation, more flexible electrical characteristics among both n- and p-type configurations can be obtained, and an RFET with strict symmetric ON-state current and ${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ ratio, that is, ( ${I}_{ \mathrm{\scriptscriptstyle ON}}{)}_{\text {n}}:{(}{I}_{ \mathrm{\scriptscriptstyle ON}}{)}_{\text {p}} = {(}I_{ \mathrm{\scriptscriptstyle OFF}}{)}_{\text {n}}:{(}{I}_{ \mathrm{\scriptscriptstyle OFF}}{)}_{\text {p}} = {1}:{1}$ , has been realized in this work. The underlying physical mechanism is explored, and the corresponding performance of the application in logic and memory is discussed. Moreover, the work-function regulation in CG and source can be recognized as an effective method to subtle tweak noise margin of electrical systems.