Normally-off HfO2-gated diamond field effect transistors
Normally-off HfO2-gated diamond field effect transistors
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DOI：
10.1063/1.4820143
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发表时间：
2013-08-26
影响因子：
4
通讯作者：
Koide, Y.
中科院分区：
文献类型：
--
作者：
Liu, J. W.;Liao, M. Y.;Koide, Y.
介绍了一种使用HfO2栅氧化物的常断氢化金刚石(H-钻石)场效应管(FET)。HfO2栅氧化物具有双层结构，这种双层结构是通过溅射沉积(SD)技术在由原子层沉积(ALD)技术制备的薄缓冲层上制备的。发现ALD-HfO2的作用是防止通过SD工艺使氢钻石表面恶化。在-9.0~2.0V的栅压范围内，SD-HfO2/Ald-HfO2/H-钻石结构的漏电流密度小于1.1×10(-4)A cm(-2)。电容-电压特性表明，固定电荷密度和陷阱电荷密度足够低，足以工作FET。HfO2门控FET具有p型沟道和完全的常关特性。栅长为4µm的FET的漏源电流最大值为-37.6 mA mm(-1)，阈值电压为-1.3+/-0.1V，非本征跨导最大值为11.2+/-0.1ms mm(-1)，有效迁移率为38.7+/-0.5 cm(2)V-1 S(-1)。(C)2013 AIP出版有限责任公司。
A normally-off hydrogenated-diamond (H-diamond) field effect transistor (FET) using a HfO2 gate oxide is demonstrated. The HfO2 gate oxide has a bilayer structure which is fabricated by a sputter-deposition (SD) technique on a thin buffer layer prepared by an atomic layer deposition (ALD) technique. The role of the ALD-HfO2 is found to prevent deterioration of the H-diamond surface by the SD process. The leakage current density of the SD-HfO2/ALD-HfO2/H-diamond structure is smaller than 1.1 x 10(-4) A cm(-2) at gate voltages from -9.0 to 2.0 V. The capacitance-voltage characteristic shows that fixed and trapped charge densities are low enough to operate the FET. The HfO2-gated FET has p-type channel and complete normally-off characteristics. The drain-source current maximum, threshold voltage, extrinsic transconductance maximum, and effective mobility of the FET with gate length of 4 mu m are -37.6 mA mm(-1), -1.3 +/- 0.1 V, 11.2 +/- 0.1 mS mm(-1), and 38.7 +/- 0.5 cm(2) V-1 s(-1), respectively. (C) 2013 AIP Publishing LLC.