The photovoltaic conversion enhancement of NiO/Tm:CeO2/SnO2 transparent p-n junction device with dual-functional Tm:CeO2 quantum dots
The photovoltaic conversion enhancement of NiO/Tm:CeO2/SnO2 transparent p-n junction device with dual-functional Tm:CeO2 quantum dots
复制标题
双功能Tm:CeO2量子点NiO/Tm:CeO2/SnO2透明p-n结器件的光伏转换增强
DOI：
10.1016/j.cej.2020.124802
复制
发表时间：
2020-08-01
影响因子：
15.1
通讯作者：
Li, Chaorong
中科院分区：
文献类型：
--
作者：
Pan, Jiaqi;Li, Shi;Li, Chaorong
采用连续水热化学溅射法制备了NiO/Tm：CeO 2量子点/SnO 2透明p-n结器件。首先采用水热法制备SnO 2纳米片阵列，然后在其表面引入化学法制备的Tm：CeO 2量子点，再通过溅射法制备NiO薄膜。结果表明，该透明器件在可见光下的透射率约为85%，光电转换效率比未改性器件提高约10（4）倍（约9700），这主要归因于双功能Tm：CeO 2量子点过渡层的改性，其中，上转换荧光可以提高太阳能利用率，合适的费米能级可以加速光生载流子的输运。此外，Tm：CeO 2量子点过渡层可以改善p-n结界面，SnO 2纳米片阵列可以提高太阳能利用率也是重要因素。
The transparent NiO/Tm:CeO2 QDs/SnO2 p-n junction device is prepared via a continuous hydrothermal-chemical-sputtering method. There, the SnO2 nanosheets arrays are grown via the hydrothermal method, then the Tm:CeO2 quantum dots (QDs), prepared via the chemical method, are introduced on the surface of the arrays, subsequently the NiO film is deposited via the sputtering. As demonstrated, the transparent device exhibits highly transmittance of about similar to 85% in visible light, evident photovoltaic conversion enhancement of about similar to 10(4)(similar to 9700) folds than the unmodified device, that can be mainly ascribed to the dual-functional Tm:CeO2 QDs transition layer modification, there, the upconversion fluorescence can increase the solar utilization, and the appropriate Fermi level can accelerate the photo-generated charge carrier transport. In addition, the Tm:CeO2 QDs transition layer can improve the p-n junction interface and the SnO2 nanosheets arrays can increase the solar utilization are also important factors.