Role of defects in resistive switching dynamics of memristors
Role of defects in resistive switching dynamics of memristors
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DOI：
10.1557/s43579-022-00243-z
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发表时间：
2022-09
影响因子：
1.9
通讯作者：
G. Tutuncuoglu;A. Mannodi-Kanakkithodi
中科院分区：
文献类型：
--
作者：
G. Tutuncuoglu;A. Mannodi-Kanakkithodi
电阻开关记忆电阻器是未来记忆和神经形态计算应用中很有前途的器件结构。缺陷被证明是关键的导电灯丝的形成，并导致器件性能指标的忆阻器。在这篇前瞻性的文章中，我们研究了缺陷在丝状忆阻器的阻性开关动力学中的作用，并探索了缺陷工程作为合理设计可控导通路径的有效方法。具体来说，我们提出了一种以数据为中心的方法，将从第一性原理计算中获得的缺陷知识与材料工程和表征工作相结合。图形抽象
Resistive-switching memristors are promising device structures for future memory and neuromorphic computing applications. Defects are shown to be critical for the conducting filament formation, and resulting device performance metrics of memristors. In this prospective article, we investigate the role of defects in the resistive-switching dynamics of filamentary-type memristors, and explore defect-engineering as an effective method to rationally design controllable conduction pathways. Specifically, we propose a data-centric approach that combines the defect-knowledge obtained from first-principles calculations with the materials engineering and characterization efforts. Graphical abstract