Investigation on decomposition mechanism of tantalum ethylate precursor during formation of TaC on C/C composite material
Investigation on decomposition mechanism of tantalum ethylate precursor during formation of TaC on C/C composite material
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DOI:
10.1016/j.matlet.2006.03.023
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发表时间:
2006-12
影响因子:
3
通讯作者:
Hanwei He;K. Zhou;X. Xiong;Bai-yun Huang
中科院分区:
文献类型:
--
作者:
Hanwei He;K. Zhou;X. Xiong;Bai-yun Huang
The amorphous tantalum ethylate as the precursor for preparation of TaC is prepared. Tantalum ethylate film is characterized by FT–IR spectra and XRD. The phase constitutions of the intermediate products during TG–DTA measurement are defined by XRD. The decomposition mechanism of tantalum ethylate precursor during formation of TaC on C/C composite material is investigated. The results indicate that, in the course of formation of TaC, when the tantalum ethylate precursor is decomposed at temperature from about 35 to 500 °C, TaO is first produced below 500 °C, then TaO is transformed into Ta2O5above 500 °C. Throughout the decomposition process of the tantalum ethylate precursor, there are no tantalum carbonides formed. Ta2O5is deoxidized by the sufficient C in the C/C composite materials and TaC is formed finally.