Carrier storage and capture dynamics in quantum-dot heterostructures
Carrier storage and capture dynamics in quantum-dot heterostructures
复制标题
量子点异质结构中的载流子存储和捕获动力学
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
P. Petroff
中科院分区：
文献类型：
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作者：
Jason M. Smith;P. Dalgarno;B. Urbaszek;E. McGhee;G. Buller;G. Nott;R. Warburton;Jorge M. García;W. Schoenfeld;P. Petroff
光致发光和时间分辨的光致发光测量的电荷可调量子点异质结显示，通过适当的偏置的设备，约90%的光生空穴可以存储在界面附近的纳米结构，随后转移到纳米结构中的控制方式。的捕获动力学是敏感的价带势的形式在层中的帽子的Stranski-Krastanow点。捕获率对外加电场的依赖性表明，价带限制电位是“软”的覆盖层，具有约14 nm的空间范围。
Photoluminescence and time-resolved photoluminescence measurements of charge tunable quantum-dot heterostructures reveal that by appropriate biasing of the device, about 90% of photogenerated holes can be stored at an interface near to the nanostructures and subsequently transferred into the nanostructures in a controlled fashion. The capture dynamics are sensitive to the form of the valence band potential in the layer that caps the Stranski–Krastanow dots. The dependence of the capture rate on applied electric field suggests that the valence band confinement potential is “soft” in the capping layer, with a spatial extent of around 14 nm.