High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors
High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors
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DOI：
10.1063/1.2794419
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发表时间：
2007-09
影响因子：
4
通讯作者：
Jinqiao Xie;X. Ni;Mo Wu;J. Leach;Ü. Özgür;H. Morkoç
中科院分区：
文献类型：
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作者：
Jinqiao Xie;X. Ni;Mo Wu;J. Leach;Ü. Özgür;H. Morkoç
通过金属有机化学气相沉积生长的 Al1−xInxN∕AlN∕GaN (x=0.20–0.12) 异质结构场效应晶体管 (HFET) 实现了高电子迁移率。 In成分从20%减少到12%，室温等效二维电子气密度从0.90×1013增加到1.64×1013cm−2，相应的电子迁移率分别为1600和1410cm2∕Vs。几乎晶格匹配的Al0.82In0.18N∕AlN∕GaN异质结构的10K迁移率达到17600cm2∕Vs，片载流子密度为9.6×1012cm−2。为了进行比较，没有 AlN 间隔物的 AlInN∕GaN 异质结构在室温下表现出高载流子密度（2.42×1013cm−2）和低迁移率（120cm2∕Vs）。我们的样品中的高迁移率部分归因于~1nm AlN 间隔物，它显着减少了合金散射并提供了光滑的界面。栅极尺寸为 1.5×40μm2、源漏极间距为 5μm 的 HFET 表现出最大跨导为 ∼200mS∕mm ...
High electron mobility was achieved in Al1−xInxN∕AlN∕GaN (x=0.20–0.12) heterostructure field effect transistors (HFETs) grown by metal-organic chemical vapor deposition. Reduction of In composition from 20% to 12% increased the room temperature equivalent two-dimensional-electron-gas density from 0.90×1013to1.64×1013cm−2 with corresponding electron mobilities of 1600 and 1410cm2∕Vs, respectively. The 10K mobility reached 17600cm2∕Vs for the nearly lattice-matched Al0.82In0.18N∕AlN∕GaN heterostructure with a sheet carrier density of 9.6×1012cm−2. For comparison, the AlInN∕GaN heterostructure without the AlN spacer exhibited a high sheet carrier density (2.42×1013cm−2) with low mobility (120cm2∕Vs) at room temperature. The high mobility in our samples is in part attributed to ∼1nm AlN spacer which significantly reduces the alloy scattering as well as provides a smooth interface. The HFETs having gate dimensions of 1.5×40μm2 and a 5μm source-drain separation exhibited a maximum transconductance of ∼200mS∕mm ...