Fabrication and characterization of single-electron tunneling transistors in the superconducting state
Fabrication and characterization of single-electron tunneling transistors in the superconducting state
复制标题
超导态单电子隧道晶体管的制备和表征
DOI：
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发表时间：
1993
影响因子：
1.8
通讯作者：
M. Tinkham
中科院分区：
文献类型：
--
作者：
J. Hergenrother;M. Tuominen;T. Tighe;M. Tinkham
采用电子束光刻技术制备了超小电容Al/Al/sub 2/O/sub 3//Al隧道结单电子充电效应器件。单电子晶体管是一种三端器件，由两个串联的隧道结和一个电容耦合到它们之间的岛的栅电极组成。典型的结面积为60 nm*60 nm，电容为190 aF。作者概述了制造过程，讨论了操作特性，并给出了样品处理的考虑因素。这些器件表现出高度非线性的I-V特性，其由栅极电压调制，如库仑阻塞所预期的那样。在超导状态下，准粒子态密度中的超导能隙导致晶体管在1.3 K以上起作用，这是泵送液体/sup 4/He制冷很容易达到的温度。作者还讨论了一个间歇性的内在开关噪声的中心岛的偏移电荷的观察。<<ETX>>
Electron-beam lithography was used to fabricate single electron charging effect devices with ultrasmall capacitance Al/Al/sub 2/O/sub 3//Al tunnel junctions. The single electron transistor is a three-terminal device composed of two series tunnel junctions and a gate electrode capacitively coupled to the island between them. Typical junctions are of area 60 nm*60 nm with a capacitance of 190 aF. The authors outline the fabrication procedures, discuss operational properties, and give sample handling considerations. These devices exhibit a highly nonlinear I-V characteristic which is modulated by the gate voltage, as expected for the Coulomb blockage. In the superconducting state, the superconducting gap in the quasiparticle density of states leads to transistor action above 1.3 K, a temperature easily reached with pumped liquid /sup 4/He refrigeration. The authors also discuss the observation of an intermittent intrinsic switching noise in the offset charge of the central island.<<ETX>>