Indium distribution in InGaAs quantum wires observed with the scanning tunneling microscope
Indium distribution in InGaAs quantum wires observed with the scanning tunneling microscope
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用扫描隧道显微镜观察InGaAs量子线中的铟分布
DOI：
10.1063/1.114494
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
F. Reinhart
中科院分区：
文献类型：
--
作者：
M. Pfister;M. Johnson;S. Alvarado;H. Salemink;U. Marti;D. Martin;F. Morier;F. Reinhart
使用横截面扫描隧道显微镜对嵌入 (AlAs)4(GaAs)8 超晶格势垒中的新月形 In0.12Ga0.88As 量子线的生长中 In 的掺入进行了原子细节研究。研究发现，表面层和第一次表面层的 In 分布可以分别在空态和填充态图像中原子解析。在 InGaAs/GaAs 界面处观察到强烈的 In 偏析，但与平面量子阱相比，量子线中心的 In 浓度没有出现预期的增强，也没有观察到超出统计预期的 In 聚集。
The incorporation of In in the growth of crescent‐shaped In0.12Ga0.88As quantum wires embedded in (AlAs)4(GaAs)8 superlattice barriers is studied in atomic detail using cross‐sectional scanning tunneling microscopy. It is found that the In distribution in both the surface and the first subsurface layer can be atomically resolved in the empty‐ and filled‐state images, respectively. Strong In segregation is seen at the InGaAs/GaAs interfaces, but neither an expected enhancement of the In concentration at the center of the quantum wire compared to the planar quantum well nor In clustering beyond the statistical expectation is observed.