1800 V NPN bipolar junction transistors in 4H-SiC
1800 V NPN bipolar junction transistors in 4H-SiC
复制标题
采用 4H-SiC 的 1800 V NPN 双极结型晶体管
DOI：
10.1109/55.910617
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发表时间：
2001
影响因子：
4.9
通讯作者：
J. Palmour
中科院分区：
文献类型：
--
作者：
S. Ryu;A. Agarwal;Ranbir Singh;J. Palmour
第一个高压npn双极结晶体管（BJTs）在4H-SiC中被证明。BJTs能够在共发射极模式下阻挡1800 V，并在室温下显示出20的峰值电流增益和10.8 m/spl ω //spl middot/cm/sup 2/导通电阻（I/sub C/=2.7 a @ V/sub CE/=2 V， 1 mm/spl倍/1.4 mm有源面积），优于迄今为止报道的所有SiC功率开关器件。在这些器件中观察到温度稳定的电流增益。这是由于在高温下深层受体原子在碱区电离的百分比较高，这抵消了高温下少数载流子寿命增加的影响。这些晶体管在导通电阻特性中显示出正的温度系数，这将使器件易于并联。
The first high voltage npn bipolar junction transistors (BJTs) in 4H-SiC have been demonstrated. The BJTs were able to block 1800 V in common emitter mode and showed a peak current gain of 20 and an on-resistance of 10.8 m/spl Omega//spl middot/cm/sup 2/ at room temperature (I/sub C/=2.7 A @ V/sub CE/=2 V for a 1 mm/spl times/1.4 mm active area), which outperforms all SiC power switching devices reported to date. Temperature-stable current gain was observed for these devices. This is due to the higher percent ionization of the deep level acceptor atoms in the base region at elevated temperatures, which offsets the effects of increased minority carrier lifetime at high temperatures. These transistors show a positive temperature coefficient in the on-resistance characteristics, which will enable easy paralleling of the devices.