Transport properties of germanium-filled CoSb3
Transport properties of germanium-filled CoSb3
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DOI：
10.1063/1.1765205
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发表时间：
2004-06
影响因子：
4
通讯作者：
G. Nolas;Jihui Yang;H. Takizawa
中科院分区：
文献类型：
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作者：
G. Nolas;Jihui Yang;H. Takizawa
我们报告了通过高压合成方法制备的致密多晶Ge填充方钴矿Ge0.25Co4Sb12和Ge0.05Co4Sb12的输运特性。进行了低温电阻率、塞贝克系数、霍尔系数和热导率测量，并与 Co4Sb11Ge 和 CoSb3 进行了比较。位于方钴矿晶体结构的间隙空隙内的Ge原子充当电子供体。这些化合物的晶格热导率低于CoSb3，但高于其他填充方钴矿。还讨论了热电应用的潜力。
We report the transport properties of dense polycrystalline Ge filled skutterudites Ge0.25Co4Sb12 and Ge0.05Co4Sb12 perepared by a high-pressure synthesis approach. Low temperature electrical resistivity, Seebeck coefficient, Hall coefficient, and thermal conductivity measurements were performed and compared with those of Co4Sb11Ge and CoSb3. The Ge atoms residing inside the interstitial voids of the skutterudite crystal structure act as electron donors. The lattice thermal conductivity of these compounds is lower than that of CoSb3 but higher than that of other filled skutterudites. The potential for thermoelectric applications is also discussed.