Field emission properties of nano-structured phosphorus-doped diamond

Field emission properties of nano-structured phosphorus-doped diamond
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DOI:
10.1016/j.apsusc.2009.05.119
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发表时间:
2009-11
影响因子:
6.7
通讯作者:
T. Yamada;C. Nebel;S. Shikata
T. Yamada;C. Nebel;S. Shikata
中科院分区:
材料科学1区
文献类型:
--
作者:
T. Yamada;C. Nebel;S. Shikata

文献摘要

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制备了掺磷金刚石纳米结构场发射体,并对其场发射性能进行了表征。制备了两种纳米结构:尖端阵列结构和尖端上的晶须结构。针尖阵列结构中使用了半径为100 nm、高度为10μm的针尖,晶须的针尖半径为5 nm、高度为500 nm。在纳米结构形成之后,与未图案化的平坦表面相比,观察到阈值场的减小。这归因于尖端的场集中。然而,在较高的电场,由于不可忽略的体电阻的尖端和晶须的发射电流的饱和观察。
Nano-structured phosphorus-doped diamonds were fabricated for field emitters and their field emission properties were characterized. Two kinds of nano-structures were prepared; tip array structures and whiskers on tip structures. The tips, which have 100nm radius and 10μm height, are used in tip array structures; whiskers have tip radii of 5nm and height of 500nm. Following nano-structure formation, a reduction of threshold fields is observed compared to non-patterned flat surfaces. This is ascribed to field concentration at the tips. However, at higher electric fields, a saturation of the emission current is observed due to non-negligible bulk resistances in tips and whiskers.