Degradation behaviors of electrical properties of GaInP/GaAs/Ge solar cells under <200 keV proton irradiation
Degradation behaviors of electrical properties of GaInP/GaAs/Ge solar cells under <200 keV proton irradiation
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DOI:
10.1016/j.solmat.2008.07.017
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发表时间:
2008-12-01
影响因子:
6.9
通讯作者:
Zhang Zhongwei
中科院分区:
文献类型:
--
作者:
Hu Jianmin;Wu Yiyong;Zhang Zhongwei
The degradation effects of the GaInP/GaAs/Ge triple-junction solar cells irradiated by