Ferromagnetic phenomenon revealed in the chalcopyrite semiconductor CdGeP2:Mn
Ferromagnetic phenomenon revealed in the chalcopyrite semiconductor CdGeP2:Mn
复制标题
黄铜矿半导体 CdGeP2:Mn 中揭示的铁磁现象
DOI：
10.1063/1.1357842
复制
发表时间：
2001
期刊：
影响因子：
--
通讯作者：
T. Ishibashi
中科院分区：
文献类型：
--
作者：
Katsuaki Sato;G. A. Medvedkin;T. Nishi;Y. Hasegawa;R. Misawa;K. Hirose;T. Ishibashi
通过固态反应技术，高浓度的 Mn 原子已成功融入黄铜矿 II-IV-V2 型半导体 CdGeP2 中，且未引起任何结构变化。采用烧结技术另外合成了Cd-Mn-Ge-P四元系黄铜矿相关材料的多晶粉末。在室温下独立生长的 CdGeP2:Mn 单晶和多晶粉末样品中观察到明确的 M-H 磁滞回线。单晶相 CdxMn1−xGeP2 的居里温度为 320 K，多晶粉末的居里温度为 310 K。磁力显微镜（MFM）观察清楚地显示出CdGeP2单晶Mn扩散表面上的条状畴图案。 CdGeP2:Mn晶体的磁光克尔椭圆率谱在T=300 K时在1.75 eV附近出现峰值。
High concentration of Mn atoms has been successfully incorporated into the chalcopyrite type II–IV–V2 semiconductor CdGeP2 by solid-state reaction technique without causing any structural changes. Polycrystalline powder of the chalcopyrite-related material in Cd–Mn–Ge–P quaternary system has been additionally synthesized by sintering technology. Well-defined M–H hysteresis loops were observed at room temperature in CdGeP2:Mn single crystal and polycrystalline powder samples grown independently. The Curie temperature has been determined to be 320 K for single crystal phase CdxMn1−xGeP2 and 310 K for the polycrystalline powder. Magnetic force microscopy (MFM) observation clearly showed a stripe domain pattern on the Mn-diffused surface of CdGeP2 single crystal. The magneto-optical Kerr ellipticity spectrum of CdGeP2:Mn crystal showed a peak around 1.75 eV at T=300 K.