A 71%-Area-Reduced Six-Input Nonvolatile Lookup-Table Circuit Using a Three-Terminal Magnetic-Tunnel-Junction-Based Single-Ended Structure
A 71%-Area-Reduced Six-Input Nonvolatile Lookup-Table Circuit Using a Three-Terminal Magnetic-Tunnel-Junction-Based Single-Ended Structure
复制标题
A%2071%面积减少%20六输入%20非易失性%20查找表%20电路%20使用%20a%20三端子%20基于磁隧道结的%20单端%20结构
DOI：
--
复制
发表时间：
2013
期刊：
影响因子：
--
通讯作者：
T. Hanyu
中科院分区：
文献类型：
--
作者：
D. Suzuki;Yuh;M. Natsui;T. Hanyu
提出了一种使用三端磁性隧道结（3T - MTJ）器件的单端电路，用于紧凑的非易失性查找表（NV - LUT）电路。3T - MTJ器件的使用使得电路中能使用高隧道磁阻比，因为读电流路径与写电流路径是分离的。通过利用单端电路结构，NV - LUT电路在没有参考电路的情况下变得相当简单。实际上，在90nm CMOS工艺下，通过集成电路模拟程序（SPICE）模拟，所提出的6输入NV - LUT电路的有效面积仅为使用基于两端MTJ的非易失性静态随机存取存储器单元的相应CMOS实现方式的29%。
A single-ended circuit using three-terminal magnetic tunnel junction (3T-MTJ) devices is proposed for a compact nonvolatile lookup-table (NV-LUT) circuit. The use of 3T-MTJ devices makes a high tunnel magneto-resistance ratio used in the circuit, because read-current path is separated from the write-current path. By utilizing single-ended circuit structure, the NV-LUT circuit becomes quite simple without reference circuit. In fact, the effective area of the proposed 6-input NV-LUT circuit is only 29% the size of the corresponding CMOS-based implementation using two-terminal-MTJ-based nonvolatile static random access memory cells, with a simulation program with integrated circuit emphasis (SPICE) simulation under a 90 nm CMOS technology.